TK55S10N1,LQ Toshiba Semiconductor and Storage MOSFET N-CH 100V 55A DPAK
Дискретные полупроводниковые приборы
Номер производителя:
TK55S10N1,LQ
Производитель:
Категория продукции:
Описание:
MOSFET N-CH 100V 55A DPAK
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
TK55S10N1,LQ Таблицы данных(PDF)
Current - Continuous Drain (Id) @ 25°C :
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
FET Feature :
FET Type :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Mounting Type :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Power Dissipation (Max) :
Rds On (Max) @ Id, Vgs :
Series :
Supplier Device Package :
Technology :
Vgs (Max) :
Vgs(th) (Max) @ Id :
в наличии
34,249
Unit Price:
Свяжитесь с нами
Предложение
TK55S10N1,LQ Конкурентные цены
ChipMlcc имеет уникальный источник поставок. Мы можем предложить TK55S10N1,LQ более
конкурентоспособную цену для наших клиентов. Вы можете насладиться нашим лучшим
сервисом, купив Chipmlcc TK55S10N1,LQ. Пожалуйста, не стесняйтесь обращаться по поводу
лучшей цены на TK55S10N1,LQ. Нажмите, чтобы получить предложение
TK55S10N1,LQ Особенности
TK55S10N1,LQ is produced by Toshiba Semiconductor and Storage, belongs to Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные.
TK55S10N1,LQ Подробная информация о продукции
:
TK55S10N1,LQ — это Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные, буферные усилители, разработанные и
произведенные
Toshiba Semiconductor and Storage.
TK55S10N1,LQ производства Toshiba Semiconductor and Storage можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TK55S10N1,LQ компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TK55S10N1,LQ (PDF), цена TK55S10N1,LQ, Распиновка TK55S10N1,LQ, руководство TK55S10N1,LQ и решение на замену TK55S10N1,LQ.
TK55S10N1,LQ производства Toshiba Semiconductor and Storage можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
TK55S10N1,LQ компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных TK55S10N1,LQ (PDF), цена TK55S10N1,LQ, Распиновка TK55S10N1,LQ, руководство TK55S10N1,LQ и решение на замену TK55S10N1,LQ.
TK55S10N1,LQ FAQ
:
1. What are the key features of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
TK55S10N1,LQ Связанные ключевые слова
:
TK55S10N1,LQ Цена
TK55S10N1,LQ Картина
TK55S10N1,LQ Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
Contains
"TK55"
series
products
