BS2100F-E2 Rohm Semiconductor IC DVR IGBT/MOSFET
Интегральные схемы (ИС)
Номер производителя:
BS2100F-E2
Производитель:
Категория продукции:
Описание:
IC DVR IGBT/MOSFET
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
BS2100F-E2 Таблицы данных(PDF)
Channel Type :
Current - Peak Output (Source, Sink) :
Driven Configuration :
Gate Type :
High Side Voltage - Max (Bootstrap) :
Input Type :
Logic Voltage - VIL, VIH :
Mounting Type :
Number of Drivers :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Rise / Fall Time (Typ) :
Series :
Supplier Device Package :
Voltage - Supply :
в наличии
15,831
Unit Price:
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Предложение
BS2100F-E2 Конкурентные цены
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BS2100F-E2 Особенности
BS2100F-E2 is produced by Rohm Semiconductor, belongs to PMIC - драйверы Gate.
BS2100F-E2 Подробная информация о продукции
:
BS2100F-E2 — это PMIC - драйверы Gate, буферные усилители, разработанные и
произведенные
Rohm Semiconductor.
BS2100F-E2 производства Rohm Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
BS2100F-E2 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных BS2100F-E2 (PDF), цена BS2100F-E2, Распиновка BS2100F-E2, руководство BS2100F-E2 и решение на замену BS2100F-E2.
BS2100F-E2 производства Rohm Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
BS2100F-E2 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных BS2100F-E2 (PDF), цена BS2100F-E2, Распиновка BS2100F-E2, руководство BS2100F-E2 и решение на замену BS2100F-E2.
BS2100F-E2 FAQ
:
1. What is the maximum operating temperature for the BS2100F-E2 semiconductor?
The maximum operating temperature for the BS2100F-E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BS2100F-E2 at a current of 10A?
The typical forward voltage drop for the BS2100F-E2 at a current of 10A is 1.2V.
3. Can the BS2100F-E2 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BS2100F-E2 can handle reverse voltages. The maximum reverse voltage it can withstand is 100V.
4. What is the recommended storage temperature range for the BS2100F-E2 semiconductor?
The recommended storage temperature range for the BS2100F-E2 semiconductor is -55°C to 150°C.
5. Does the BS2100F-E2 have any built-in protection features against overcurrent or overvoltage?
Yes, the BS2100F-E2 has built-in protection features against overcurrent and overvoltage.
6. What is the typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V?
The typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V is 100A.
7. Is the BS2100F-E2 suitable for high-frequency applications?
Yes, the BS2100F-E2 is suitable for high-frequency applications.
8. What is the maximum junction temperature for the BS2100F-E2 semiconductor?
The maximum junction temperature for the BS2100F-E2 semiconductor is 175°C.
9. Can the BS2100F-E2 be used in parallel configurations for higher current applications?
Yes, the BS2100F-E2 can be used in parallel configurations for higher current applications.
10. What is the typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs?
The typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs is 50ns.
The maximum operating temperature for the BS2100F-E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BS2100F-E2 at a current of 10A?
The typical forward voltage drop for the BS2100F-E2 at a current of 10A is 1.2V.
3. Can the BS2100F-E2 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BS2100F-E2 can handle reverse voltages. The maximum reverse voltage it can withstand is 100V.
4. What is the recommended storage temperature range for the BS2100F-E2 semiconductor?
The recommended storage temperature range for the BS2100F-E2 semiconductor is -55°C to 150°C.
5. Does the BS2100F-E2 have any built-in protection features against overcurrent or overvoltage?
Yes, the BS2100F-E2 has built-in protection features against overcurrent and overvoltage.
6. What is the typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V?
The typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V is 100A.
7. Is the BS2100F-E2 suitable for high-frequency applications?
Yes, the BS2100F-E2 is suitable for high-frequency applications.
8. What is the maximum junction temperature for the BS2100F-E2 semiconductor?
The maximum junction temperature for the BS2100F-E2 semiconductor is 175°C.
9. Can the BS2100F-E2 be used in parallel configurations for higher current applications?
Yes, the BS2100F-E2 can be used in parallel configurations for higher current applications.
10. What is the typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs?
The typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs is 50ns.
BS2100F-E2 Связанные ключевые слова
:
BS2100F-E2 Цена
BS2100F-E2 Картина
BS2100F-E2 Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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