MBR1100G ON Semiconductor DIODE SCHOTTKY 100V 1A AXIAL
Дискретные полупроводниковые приборы
Номер производителя:
MBR1100G
Производитель:
Категория продукции:
Описание:
DIODE SCHOTTKY 100V 1A AXIAL
Состояние RoHs:

Таблицы данных:
Capacitance @ Vr, F :
Current - Average Rectified (Io) :
Current - Reverse Leakage @ Vr :
Diode Type :
Mounting Type :
Operating Temperature - Junction :
Package / Case :
Packaging :
Part Status :
Reverse Recovery Time (trr) :
Series :
Speed :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
в наличии
27,149
Unit Price:
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MBR1100G Конкурентные цены
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MBR1100G Особенности
MBR1100G is produced by ON Semiconductor, belongs to Диоды - выпрямители - одиночные.
MBR1100G Подробная информация о продукции
:
MBR1100G — это Диоды - выпрямители - одиночные, буферные усилители, разработанные и
произведенные
ON Semiconductor.
MBR1100G производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MBR1100G компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MBR1100G (PDF), цена MBR1100G, Распиновка MBR1100G, руководство MBR1100G и решение на замену MBR1100G.
MBR1100G производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MBR1100G компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MBR1100G (PDF), цена MBR1100G, Распиновка MBR1100G, руководство MBR1100G и решение на замену MBR1100G.
MBR1100G FAQ
:
1. What is the maximum repetitive peak reverse voltage (Vrrm) of the MBR1100G Schottky diode?
The MBR1100G Schottky diode has a maximum repetitive peak reverse voltage (Vrrm) of 100 volts.
2. What is the average forward current (If-avg) rating of the MBR1100G diode?
The MBR1100G diode has an average forward current (If-avg) rating of 1 ampere.
3. What is the typical forward voltage drop (Vf) of the MBR1100G at a forward current of 5A?
The typical forward voltage drop (Vf) of the MBR1100G at a forward current of 5A is 0.55 volts.
4. Can the MBR1100G diode handle high-frequency switching applications?
Yes, the MBR1100G diode is suitable for high-frequency switching applications due to its fast switching characteristics.
5. What is the maximum junction temperature (Tj) of the MBR1100G diode?
The maximum junction temperature (Tj) of the MBR1100G diode is 150 degrees Celsius.
6. Does the MBR1100G diode have a low leakage current at room temperature?
Yes, the MBR1100G diode exhibits low leakage current at room temperature, making it suitable for various power supply designs.
7. Is the MBR1100G diode available in a surface mount package?
Yes, the MBR1100G diode is available in a surface mount SMB package, which facilitates easy PCB assembly.
8. What is the reverse recovery time (trr) of the MBR1100G diode?
The reverse recovery time (trr) of the MBR1100G diode is typically 15 nanoseconds.
9. Can the MBR1100G diode be used in automotive electronic systems?
Yes, the MBR1100G diode is designed to meet the requirements of automotive electronic systems and is AEC-Q101 qualified.
10. Does the MBR1100G diode have a wide operating temperature range?
Yes, the MBR1100G diode has a wide operating temperature range from -65°C to 175°C, making it suitable for various environmental conditions.
The MBR1100G Schottky diode has a maximum repetitive peak reverse voltage (Vrrm) of 100 volts.
2. What is the average forward current (If-avg) rating of the MBR1100G diode?
The MBR1100G diode has an average forward current (If-avg) rating of 1 ampere.
3. What is the typical forward voltage drop (Vf) of the MBR1100G at a forward current of 5A?
The typical forward voltage drop (Vf) of the MBR1100G at a forward current of 5A is 0.55 volts.
4. Can the MBR1100G diode handle high-frequency switching applications?
Yes, the MBR1100G diode is suitable for high-frequency switching applications due to its fast switching characteristics.
5. What is the maximum junction temperature (Tj) of the MBR1100G diode?
The maximum junction temperature (Tj) of the MBR1100G diode is 150 degrees Celsius.
6. Does the MBR1100G diode have a low leakage current at room temperature?
Yes, the MBR1100G diode exhibits low leakage current at room temperature, making it suitable for various power supply designs.
7. Is the MBR1100G diode available in a surface mount package?
Yes, the MBR1100G diode is available in a surface mount SMB package, which facilitates easy PCB assembly.
8. What is the reverse recovery time (trr) of the MBR1100G diode?
The reverse recovery time (trr) of the MBR1100G diode is typically 15 nanoseconds.
9. Can the MBR1100G diode be used in automotive electronic systems?
Yes, the MBR1100G diode is designed to meet the requirements of automotive electronic systems and is AEC-Q101 qualified.
10. Does the MBR1100G diode have a wide operating temperature range?
Yes, the MBR1100G diode has a wide operating temperature range from -65°C to 175°C, making it suitable for various environmental conditions.
MBR1100G Связанные ключевые слова
:
MBR1100G Цена
MBR1100G Картина
MBR1100G Напряжение на выводе
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