BF422RL1G ON Semiconductor TRANS NPN 250V 0.05A TO-92
Дискретные полупроводниковые приборы TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Номер производителя:
BF422RL1G
Производитель:
Категория продукции:
Описание:
TRANS NPN 250V 0.05A TO-92
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
BF422RL1G Таблицы данных(PDF)
Current - Collector (Ic) (Max) :
50mA
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 25mA, 20V
Frequency - Transition :
60MHz
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Power - Max :
830mW
Series :
-
Supplier Device Package :
TO-92-3
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) :
250V
в наличии
34,247
Unit Price:
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Предложение
BF422RL1G Конкурентные цены
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конкурентоспособную цену для наших клиентов. Вы можете насладиться нашим лучшим
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BF422RL1G Особенности
BF422RL1G is produced by ON Semiconductor, belongs to Транзисторы - биполярные (BJT) - одиночные, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using TO-92-3.
BF422RL1G Подробная информация о продукции
:
BF422RL1G — это Транзисторы - биполярные (BJT) - одиночные, буферные усилители, разработанные и
произведенные
ON Semiconductor.
BF422RL1G производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
BF422RL1G компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных BF422RL1G (PDF), цена BF422RL1G, Распиновка BF422RL1G, руководство BF422RL1G и решение на замену BF422RL1G.
BF422RL1G производства ON Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
BF422RL1G компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных BF422RL1G (PDF), цена BF422RL1G, Распиновка BF422RL1G, руководство BF422RL1G и решение на замену BF422RL1G.
BF422RL1G FAQ
:
1. What is the maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor?
The maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor is 300mA.
2. What is the maximum collector-emitter voltage (Vce) for the BF422RL1G transistor?
The maximum collector-emitter voltage (Vce) for the BF422RL1G transistor is 250V.
3. Can the BF422RL1G transistor be used for high-frequency applications?
Yes, the BF422RL1G transistor can be used for high-frequency applications due to its high transition frequency (ft) of 150MHz.
4. What is the power dissipation (Pd) rating for the BF422RL1G transistor?
The power dissipation (Pd) rating for the BF422RL1G transistor is 625mW.
5. Is the BF422RL1G transistor suitable for switching applications?
Yes, the BF422RL1G transistor is suitable for switching applications due to its fast switching speed and low saturation voltage.
6. What is the typical hFE (DC current gain) range for the BF422RL1G transistor?
The typical hFE (DC current gain) range for the BF422RL1G transistor is 100-400.
7. Does the BF422RL1G transistor require a heat sink for operation?
It is recommended to use a heat sink for the BF422RL1G transistor, especially when operating at higher currents or power levels.
8. What is the storage temperature range for the BF422RL1G transistor?
The storage temperature range for the BF422RL1G transistor is -55°C to +150°C.
9. Can the BF422RL1G transistor handle inductive loads?
Yes, the BF422RL1G transistor can handle inductive loads with appropriate protection diodes and circuit design.
10. What are the typical applications for the BF422RL1G transistor?
Typical applications for the BF422RL1G transistor include audio amplification, switching circuits, and signal processing in electronic devices.
The maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor is 300mA.
2. What is the maximum collector-emitter voltage (Vce) for the BF422RL1G transistor?
The maximum collector-emitter voltage (Vce) for the BF422RL1G transistor is 250V.
3. Can the BF422RL1G transistor be used for high-frequency applications?
Yes, the BF422RL1G transistor can be used for high-frequency applications due to its high transition frequency (ft) of 150MHz.
4. What is the power dissipation (Pd) rating for the BF422RL1G transistor?
The power dissipation (Pd) rating for the BF422RL1G transistor is 625mW.
5. Is the BF422RL1G transistor suitable for switching applications?
Yes, the BF422RL1G transistor is suitable for switching applications due to its fast switching speed and low saturation voltage.
6. What is the typical hFE (DC current gain) range for the BF422RL1G transistor?
The typical hFE (DC current gain) range for the BF422RL1G transistor is 100-400.
7. Does the BF422RL1G transistor require a heat sink for operation?
It is recommended to use a heat sink for the BF422RL1G transistor, especially when operating at higher currents or power levels.
8. What is the storage temperature range for the BF422RL1G transistor?
The storage temperature range for the BF422RL1G transistor is -55°C to +150°C.
9. Can the BF422RL1G transistor handle inductive loads?
Yes, the BF422RL1G transistor can handle inductive loads with appropriate protection diodes and circuit design.
10. What are the typical applications for the BF422RL1G transistor?
Typical applications for the BF422RL1G transistor include audio amplification, switching circuits, and signal processing in electronic devices.
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