1214-110M Microsemi Corporation TRANS RF BIPO 270W 8A 55KT1
Дискретные полупроводниковые приборы
Номер производителя:
1214-110M
Производитель:
Категория продукции:
Описание:
TRANS RF BIPO 270W 8A 55KT1
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
1214-110M Таблицы данных(PDF)
Current - Collector (Ic) (Max) :
DC Current Gain (hFE) (Min) @ Ic, Vce :
Frequency - Transition :
Gain :
Mounting Type :
Noise Figure (dB Typ @ f) :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Power - Max :
Series :
Supplier Device Package :
Transistor Type :
Voltage - Collector Emitter Breakdown (Max) :
в наличии
57,663
Unit Price:
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1214-110M Конкурентные цены
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1214-110M Особенности
1214-110M is produced by Microsemi Corporation, belongs to Транзисторы - биполярные (BJT) - RF.
1214-110M Подробная информация о продукции
:
1214-110M — это Транзисторы - биполярные (BJT) - RF, буферные усилители, разработанные и
произведенные
Microsemi Corporation.
1214-110M производства Microsemi Corporation можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
1214-110M компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных 1214-110M (PDF), цена 1214-110M, Распиновка 1214-110M, руководство 1214-110M и решение на замену 1214-110M.
1214-110M производства Microsemi Corporation можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
1214-110M компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных 1214-110M (PDF), цена 1214-110M, Распиновка 1214-110M, руководство 1214-110M и решение на замену 1214-110M.
1214-110M FAQ
:
1. What is the operating temperature range for the 1214-110M discrete semiconductor?
The operating temperature range for the 1214-110M discrete semiconductor is -55°C to +150°C.
2. What is the maximum voltage rating for the 1214-110M?
The maximum voltage rating for the 1214-110M is 100V.
3. Can the 1214-110M be used in high-frequency applications?
Yes, the 1214-110M can be used in high-frequency applications due to its fast switching characteristics and low capacitance.
4. What is the typical on-state voltage drop for the 1214-110M at its rated current?
The typical on-state voltage drop for the 1214-110M at its rated current is 0.7V.
5. Does the 1214-110M require a heat sink for operation?
It is recommended to use a heat sink for the 1214-110M when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the maximum continuous forward current rating for the 1214-110M?
The maximum continuous forward current rating for the 1214-110M is 10A.
7. Is the 1214-110M suitable for use in automotive applications?
Yes, the 1214-110M is suitable for use in automotive applications, as it meets the necessary reliability and performance requirements for such environments.
8. What is the typical reverse recovery time for the 1214-110M?
The typical reverse recovery time for the 1214-110M is 35 nanoseconds.
9. Can the 1214-110M be operated in parallel for higher current applications?
Yes, the 1214-110M can be operated in parallel to achieve higher current-handling capabilities, provided that proper current sharing and thermal management are implemented.
10. What are the recommended storage conditions for the 1214-110M?
The recommended storage conditions for the 1214-110M include a dry environment with a temperature range of -55°C to +150°C to maintain its electrical and mechanical integrity.
The operating temperature range for the 1214-110M discrete semiconductor is -55°C to +150°C.
2. What is the maximum voltage rating for the 1214-110M?
The maximum voltage rating for the 1214-110M is 100V.
3. Can the 1214-110M be used in high-frequency applications?
Yes, the 1214-110M can be used in high-frequency applications due to its fast switching characteristics and low capacitance.
4. What is the typical on-state voltage drop for the 1214-110M at its rated current?
The typical on-state voltage drop for the 1214-110M at its rated current is 0.7V.
5. Does the 1214-110M require a heat sink for operation?
It is recommended to use a heat sink for the 1214-110M when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the maximum continuous forward current rating for the 1214-110M?
The maximum continuous forward current rating for the 1214-110M is 10A.
7. Is the 1214-110M suitable for use in automotive applications?
Yes, the 1214-110M is suitable for use in automotive applications, as it meets the necessary reliability and performance requirements for such environments.
8. What is the typical reverse recovery time for the 1214-110M?
The typical reverse recovery time for the 1214-110M is 35 nanoseconds.
9. Can the 1214-110M be operated in parallel for higher current applications?
Yes, the 1214-110M can be operated in parallel to achieve higher current-handling capabilities, provided that proper current sharing and thermal management are implemented.
10. What are the recommended storage conditions for the 1214-110M?
The recommended storage conditions for the 1214-110M include a dry environment with a temperature range of -55°C to +150°C to maintain its electrical and mechanical integrity.
1214-110M Связанные ключевые слова
:
1214-110M Цена
1214-110M Картина
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