IX6S11S6T/R IXYS IC DRVR HALF BRIDGE 6A 18-SOIC
Интегральные схемы (ИС)
Номер производителя:
IX6S11S6T/R
Производитель:
Категория продукции:
Описание:
IC DRVR HALF BRIDGE 6A 18-SOIC
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
Channel Type :
Current - Peak Output (Source, Sink) :
Driven Configuration :
Gate Type :
High Side Voltage - Max (Bootstrap) :
Input Type :
Logic Voltage - VIL, VIH :
Mounting Type :
Number of Drivers :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Rise / Fall Time (Typ) :
Series :
Supplier Device Package :
Voltage - Supply :
в наличии
60,613
Unit Price:
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Предложение
IX6S11S6T/R Конкурентные цены
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конкурентоспособную цену для наших клиентов. Вы можете насладиться нашим лучшим
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IX6S11S6T/R Особенности
IX6S11S6T/R is produced by IXYS, belongs to PMIC - драйверы Gate.
IX6S11S6T/R Подробная информация о продукции
:
IX6S11S6T/R — это PMIC - драйверы Gate, буферные усилители, разработанные и
произведенные
IXYS.
IX6S11S6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX6S11S6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX6S11S6T/R (PDF), цена IX6S11S6T/R, Распиновка IX6S11S6T/R, руководство IX6S11S6T/R и решение на замену IX6S11S6T/R.
IX6S11S6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX6S11S6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX6S11S6T/R (PDF), цена IX6S11S6T/R, Распиновка IX6S11S6T/R, руководство IX6S11S6T/R и решение на замену IX6S11S6T/R.
IX6S11S6T/R FAQ
:
1. What is the maximum operating temperature of the IX6S11S6T/R semiconductor?
The maximum operating temperature of the IX6S11S6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6S11S6T/R semiconductor?
The typical forward voltage drop for the IX6S11S6T/R semiconductor is 0.7V.
3. Can the IX6S11S6T/R semiconductor handle high-frequency switching applications?
Yes, the IX6S11S6T/R semiconductor is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX6S11S6T/R semiconductor?
The recommended storage temperature range for the IX6S11S6T/R semiconductor is -55°C to 150°C.
5. Does the IX6S11S6T/R semiconductor have built-in overcurrent protection?
Yes, the IX6S11S6T/R semiconductor features built-in overcurrent protection for enhanced safety.
6. What is the typical reverse recovery time of the IX6S11S6T/R semiconductor?
The typical reverse recovery time of the IX6S11S6T/R semiconductor is 35ns.
7. Is the IX6S11S6T/R semiconductor suitable for automotive applications?
Yes, the IX6S11S6T/R semiconductor is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous drain current rating for the IX6S11S6T/R semiconductor?
The maximum continuous drain current rating for the IX6S11S6T/R semiconductor is 30A.
9. Can the IX6S11S6T/R semiconductor be used in parallel configurations for higher current applications?
Yes, the IX6S11S6T/R semiconductor can be used in parallel configurations to achieve higher current capabilities.
10. What is the typical gate threshold voltage for the IX6S11S6T/R semiconductor?
The typical gate threshold voltage for the IX6S11S6T/R semiconductor is 2.5V.
I hope this information is helpful.
The maximum operating temperature of the IX6S11S6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6S11S6T/R semiconductor?
The typical forward voltage drop for the IX6S11S6T/R semiconductor is 0.7V.
3. Can the IX6S11S6T/R semiconductor handle high-frequency switching applications?
Yes, the IX6S11S6T/R semiconductor is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX6S11S6T/R semiconductor?
The recommended storage temperature range for the IX6S11S6T/R semiconductor is -55°C to 150°C.
5. Does the IX6S11S6T/R semiconductor have built-in overcurrent protection?
Yes, the IX6S11S6T/R semiconductor features built-in overcurrent protection for enhanced safety.
6. What is the typical reverse recovery time of the IX6S11S6T/R semiconductor?
The typical reverse recovery time of the IX6S11S6T/R semiconductor is 35ns.
7. Is the IX6S11S6T/R semiconductor suitable for automotive applications?
Yes, the IX6S11S6T/R semiconductor is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous drain current rating for the IX6S11S6T/R semiconductor?
The maximum continuous drain current rating for the IX6S11S6T/R semiconductor is 30A.
9. Can the IX6S11S6T/R semiconductor be used in parallel configurations for higher current applications?
Yes, the IX6S11S6T/R semiconductor can be used in parallel configurations to achieve higher current capabilities.
10. What is the typical gate threshold voltage for the IX6S11S6T/R semiconductor?
The typical gate threshold voltage for the IX6S11S6T/R semiconductor is 2.5V.
I hope this information is helpful.
IX6S11S6T/R Связанные ключевые слова
:
IX6S11S6T/R Цена
IX6S11S6T/R Картина
IX6S11S6T/R Напряжение на выводе
Акции: Быстрая проверка котировок
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Contains
"IX6S"
series
products