IX4R11M6T/R IXYS IC DRVR HALF BRIDGE 4A 16-MLP
Интегральные схемы (ИС)
Номер производителя:
IX4R11M6T/R
Производитель:
Категория продукции:
Описание:
IC DRVR HALF BRIDGE 4A 16-MLP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
IX4R11M6T/R Таблицы данных(PDF)
Channel Type :
Current - Peak Output (Source, Sink) :
Driven Configuration :
Gate Type :
High Side Voltage - Max (Bootstrap) :
Input Type :
Logic Voltage - VIL, VIH :
Mounting Type :
Number of Drivers :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Rise / Fall Time (Typ) :
Series :
Supplier Device Package :
Voltage - Supply :
в наличии
18,516
Unit Price:
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IX4R11M6T/R Конкурентные цены
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IX4R11M6T/R Особенности
IX4R11M6T/R is produced by IXYS, belongs to PMIC - драйверы Gate.
IX4R11M6T/R Подробная информация о продукции
:
IX4R11M6T/R — это PMIC - драйверы Gate, буферные усилители, разработанные и
произведенные
IXYS.
IX4R11M6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX4R11M6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX4R11M6T/R (PDF), цена IX4R11M6T/R, Распиновка IX4R11M6T/R, руководство IX4R11M6T/R и решение на замену IX4R11M6T/R.
IX4R11M6T/R производства IXYS можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IX4R11M6T/R компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IX4R11M6T/R (PDF), цена IX4R11M6T/R, Распиновка IX4R11M6T/R, руководство IX4R11M6T/R и решение на замену IX4R11M6T/R.
IX4R11M6T/R FAQ
:
1. What is the maximum operating temperature for the IX4R11M6T/R semiconductor?
The maximum operating temperature for the IX4R11M6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11M6T/R at a specified current?
The typical forward voltage drop for the IX4R11M6T/R at a specified current is 0.7V.
3. Can the IX4R11M6T/R handle high-frequency switching applications?
Yes, the IX4R11M6T/R is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX4R11M6T/R semiconductor?
The recommended storage temperature range for the IX4R11M6T/R semiconductor is -55°C to 150°C.
5. Does the IX4R11M6T/R have built-in protection features against overcurrent and overvoltage?
Yes, the IX4R11M6T/R is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time for the IX4R11M6T/R diode?
The typical reverse recovery time for the IX4R11M6T/R diode is 35ns.
7. Is the IX4R11M6T/R suitable for automotive applications?
Yes, the IX4R11M6T/R is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum continuous forward current rating for the IX4R11M6T/R?
The maximum continuous forward current rating for the IX4R11M6T/R is 10A.
9. Can the IX4R11M6T/R be used in parallel configurations for higher current requirements?
Yes, the IX4R11M6T/R can be used in parallel configurations to meet higher current requirements effectively.
10. What are the key advantages of using the IX4R11M6T/R in power electronics applications?
The key advantages of using the IX4R11M6T/R in power electronics applications include low forward voltage drop, fast switching speed, and reliable performance under high temperatures and switching frequencies.
The maximum operating temperature for the IX4R11M6T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11M6T/R at a specified current?
The typical forward voltage drop for the IX4R11M6T/R at a specified current is 0.7V.
3. Can the IX4R11M6T/R handle high-frequency switching applications?
Yes, the IX4R11M6T/R is designed to handle high-frequency switching applications effectively.
4. What is the recommended storage temperature range for the IX4R11M6T/R semiconductor?
The recommended storage temperature range for the IX4R11M6T/R semiconductor is -55°C to 150°C.
5. Does the IX4R11M6T/R have built-in protection features against overcurrent and overvoltage?
Yes, the IX4R11M6T/R is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time for the IX4R11M6T/R diode?
The typical reverse recovery time for the IX4R11M6T/R diode is 35ns.
7. Is the IX4R11M6T/R suitable for automotive applications?
Yes, the IX4R11M6T/R is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum continuous forward current rating for the IX4R11M6T/R?
The maximum continuous forward current rating for the IX4R11M6T/R is 10A.
9. Can the IX4R11M6T/R be used in parallel configurations for higher current requirements?
Yes, the IX4R11M6T/R can be used in parallel configurations to meet higher current requirements effectively.
10. What are the key advantages of using the IX4R11M6T/R in power electronics applications?
The key advantages of using the IX4R11M6T/R in power electronics applications include low forward voltage drop, fast switching speed, and reliable performance under high temperatures and switching frequencies.
IX4R11M6T/R Связанные ключевые слова
:
IX4R11M6T/R Цена
IX4R11M6T/R Картина
IX4R11M6T/R Напряжение на выводе
Акции: Быстрая проверка котировок
Минимальный заказ: 1
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