GB10SLT12-220 GeneSiC Semiconductor DIODE SCHOTTKY 1200V 10A TO220AC
Дискретные полупроводниковые приборы TO-220-2
Номер производителя:
GB10SLT12-220
Производитель:
Категория продукции:
Описание:
DIODE SCHOTTKY 1200V 10A TO220AC
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
GB10SLT12-220 Таблицы данных(PDF)
Capacitance @ Vr, F :
520pF @ 1V, 1MHz
Current - Average Rectified (Io) :
10A
Current - Reverse Leakage @ Vr :
40µA @ 1200V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-220-2
Packaging :
Tube
Part Status :
Active
Reverse Recovery Time (trr) :
0ns
Series :
-
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-220AC
Voltage - DC Reverse (Vr) (Max) :
1200V
Voltage - Forward (Vf) (Max) @ If :
1.8V @ 10A
в наличии
21,307
Unit Price:
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Предложение
GB10SLT12-220 Конкурентные цены
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GB10SLT12-220 Особенности
GB10SLT12-220 is produced by GeneSiC Semiconductor, belongs to Диоды - выпрямители - одиночные, the size is TO-220-2, and Tube is its most common packaging method, which belongs to the - series, and has the speed of No Recovery Time > 500mA (Io), using TO-220AC.
GB10SLT12-220 Подробная информация о продукции
:
GB10SLT12-220 — это Диоды - выпрямители - одиночные, буферные усилители, разработанные и
произведенные
GeneSiC Semiconductor.
GB10SLT12-220 производства GeneSiC Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
GB10SLT12-220 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных GB10SLT12-220 (PDF), цена GB10SLT12-220, Распиновка GB10SLT12-220, руководство GB10SLT12-220 и решение на замену GB10SLT12-220.
GB10SLT12-220 производства GeneSiC Semiconductor можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
GB10SLT12-220 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных GB10SLT12-220 (PDF), цена GB10SLT12-220, Распиновка GB10SLT12-220, руководство GB10SLT12-220 и решение на замену GB10SLT12-220.
GB10SLT12-220 FAQ
:
1. What is the maximum operating temperature for the GB10SLT12-220 semiconductor?
The maximum operating temperature for the GB10SLT12-220 semiconductor is 150°C.
2. What is the typical forward voltage drop for the GB10SLT12-220 at its rated current?
The typical forward voltage drop for the GB10SLT12-220 at its rated current is 0.7V.
3. What is the reverse recovery time of the GB10SLT12-220 semiconductor?
The reverse recovery time of the GB10SLT12-220 semiconductor is typically 50 nanoseconds.
4. Can the GB10SLT12-220 handle high-frequency switching applications?
Yes, the GB10SLT12-220 is designed to handle high-frequency switching applications effectively.
5. What is the maximum continuous forward current rating for the GB10SLT12-220?
The maximum continuous forward current rating for the GB10SLT12-220 is 10A.
6. Is the GB10SLT12-220 suitable for automotive electronic systems?
Yes, the GB10SLT12-220 is suitable for use in automotive electronic systems.
7. Does the GB10SLT12-220 have built-in overcurrent protection?
No, the GB10SLT12-220 does not have built-in overcurrent protection and requires external circuitry for protection.
8. What is the typical junction-to-case thermal resistance of the GB10SLT12-220?
The typical junction-to-case thermal resistance of the GB10SLT12-220 is 3.5°C/W.
9. Can the GB10SLT12-220 be used in parallel for higher current applications?
Yes, the GB10SLT12-220 can be used in parallel to achieve higher current handling capabilities.
10. What is the storage temperature range for the GB10SLT12-220 semiconductor?
The storage temperature range for the GB10SLT12-220 semiconductor is -55°C to 175°C.
The maximum operating temperature for the GB10SLT12-220 semiconductor is 150°C.
2. What is the typical forward voltage drop for the GB10SLT12-220 at its rated current?
The typical forward voltage drop for the GB10SLT12-220 at its rated current is 0.7V.
3. What is the reverse recovery time of the GB10SLT12-220 semiconductor?
The reverse recovery time of the GB10SLT12-220 semiconductor is typically 50 nanoseconds.
4. Can the GB10SLT12-220 handle high-frequency switching applications?
Yes, the GB10SLT12-220 is designed to handle high-frequency switching applications effectively.
5. What is the maximum continuous forward current rating for the GB10SLT12-220?
The maximum continuous forward current rating for the GB10SLT12-220 is 10A.
6. Is the GB10SLT12-220 suitable for automotive electronic systems?
Yes, the GB10SLT12-220 is suitable for use in automotive electronic systems.
7. Does the GB10SLT12-220 have built-in overcurrent protection?
No, the GB10SLT12-220 does not have built-in overcurrent protection and requires external circuitry for protection.
8. What is the typical junction-to-case thermal resistance of the GB10SLT12-220?
The typical junction-to-case thermal resistance of the GB10SLT12-220 is 3.5°C/W.
9. Can the GB10SLT12-220 be used in parallel for higher current applications?
Yes, the GB10SLT12-220 can be used in parallel to achieve higher current handling capabilities.
10. What is the storage temperature range for the GB10SLT12-220 semiconductor?
The storage temperature range for the GB10SLT12-220 semiconductor is -55°C to 175°C.
GB10SLT12-220 Связанные ключевые слова
:
GB10SLT12-220 Цена
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GB10SLT12-220 Напряжение на выводе
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