W631GG6MB11I Winbond Electronics IC SDRAM 1GBIT 933MHZ 96WBGA
Интегральные схемы (ИС) -
Номер производителя:
W631GG6MB11I
Производитель:
Категория продукции:
Описание:
IC SDRAM 1GBIT 933MHZ 96WBGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
W631GG6MB11I Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
-
Memory Interface :
-
Memory Size :
-
Memory Type :
-
Mounting Type :
-
Operating Temperature :
-
Package / Case :
-
Packaging :
-
Part Status :
Active
Series :
Supplier Device Package :
-
Technology :
-
Voltage - Supply :
-
Write Cycle Time - Word, Page :
-
в наличии
32,573
Unit Price:
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Предложение
W631GG6MB11I Конкурентные цены
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W631GG6MB11I Особенности
W631GG6MB11I is produced by Winbond Electronics, belongs to объем памяти, and its best working temperature is -, the size is -, and - is its most common packaging method, which belongs to the series, using -, - is the most suitable voltage.
W631GG6MB11I Подробная информация о продукции
:
W631GG6MB11I — это объем памяти, буферные усилители, разработанные и
произведенные
Winbond Electronics.
W631GG6MB11I производства Winbond Electronics можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
W631GG6MB11I компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных W631GG6MB11I (PDF), цена W631GG6MB11I, Распиновка W631GG6MB11I, руководство W631GG6MB11I и решение на замену W631GG6MB11I.
W631GG6MB11I производства Winbond Electronics можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
W631GG6MB11I компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных W631GG6MB11I (PDF), цена W631GG6MB11I, Распиновка W631GG6MB11I, руководство W631GG6MB11I и решение на замену W631GG6MB11I.
W631GG6MB11I FAQ
:
1. What is the maximum operating temperature of the W631GG6MB11I discrete semiconductor?
The maximum operating temperature of the W631GG6MB11I discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the W631GG6MB11I at a specified current?
The typical forward voltage drop for the W631GG6MB11I at a specified current is 0.7V.
3. Can the W631GG6MB11I handle high-frequency applications?
Yes, the W631GG6MB11I is designed to handle high-frequency applications effectively.
4. What is the maximum continuous forward current rating for the W631GG6MB11I?
The maximum continuous forward current rating for the W631GG6MB11I is 10A.
5. Does the W631GG6MB11I require a heat sink for proper operation?
Yes, it is recommended to use a heat sink with the W631GG6MB11I for optimal performance and reliability.
6. What is the typical reverse leakage current for the W631GG6MB11I at a specified voltage?
The typical reverse leakage current for the W631GG6MB11I at a specified voltage is 10μA.
7. Is the W631GG6MB11I suitable for automotive applications?
Yes, the W631GG6MB11I is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum reverse voltage rating for the W631GG6MB11I?
The maximum reverse voltage rating for the W631GG6MB11I is 100V.
9. Can the W631GG6MB11I be used in parallel to increase current handling capability?
Yes, the W631GG6MB11I can be used in parallel to increase current handling capability within specified guidelines.
10. Does the W631GG6MB11I have built-in protection features against overcurrent or overtemperature conditions?
Yes, the W631GG6MB11I incorporates built-in protection features against overcurrent and overtemperature conditions for enhanced reliability and safety.
The maximum operating temperature of the W631GG6MB11I discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the W631GG6MB11I at a specified current?
The typical forward voltage drop for the W631GG6MB11I at a specified current is 0.7V.
3. Can the W631GG6MB11I handle high-frequency applications?
Yes, the W631GG6MB11I is designed to handle high-frequency applications effectively.
4. What is the maximum continuous forward current rating for the W631GG6MB11I?
The maximum continuous forward current rating for the W631GG6MB11I is 10A.
5. Does the W631GG6MB11I require a heat sink for proper operation?
Yes, it is recommended to use a heat sink with the W631GG6MB11I for optimal performance and reliability.
6. What is the typical reverse leakage current for the W631GG6MB11I at a specified voltage?
The typical reverse leakage current for the W631GG6MB11I at a specified voltage is 10μA.
7. Is the W631GG6MB11I suitable for automotive applications?
Yes, the W631GG6MB11I is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the maximum reverse voltage rating for the W631GG6MB11I?
The maximum reverse voltage rating for the W631GG6MB11I is 100V.
9. Can the W631GG6MB11I be used in parallel to increase current handling capability?
Yes, the W631GG6MB11I can be used in parallel to increase current handling capability within specified guidelines.
10. Does the W631GG6MB11I have built-in protection features against overcurrent or overtemperature conditions?
Yes, the W631GG6MB11I incorporates built-in protection features against overcurrent and overtemperature conditions for enhanced reliability and safety.
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