MT29F1HT08EMHBBJ4-3R:B Micron Technology Inc. TLC 1.5T 192GX8 VBGA QDP
Интегральные схемы (ИС)
Номер производителя:
MT29F1HT08EMHBBJ4-3R:B
Производитель:
Категория продукции:
Описание:
TLC 1.5T 192GX8 VBGA QDP
Состояние RoHs:
Таблицы данных:
Access Time :
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Memory Interface :
Memory Size :
Memory Type :
Mounting Type :
Operating Temperature :
Package / Case :
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Series :
Supplier Device Package :
Technology :
Voltage - Supply :
Write Cycle Time - Word, Page :
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19,637
Unit Price:
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MT29F1HT08EMHBBJ4-3R:B Конкурентные цены
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MT29F1HT08EMHBBJ4-3R:B Особенности
MT29F1HT08EMHBBJ4-3R:B is produced by Micron Technology Inc., belongs to объем памяти.
MT29F1HT08EMHBBJ4-3R:B Подробная информация о продукции
:
MT29F1HT08EMHBBJ4-3R:B — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F1HT08EMHBBJ4-3R:B производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1HT08EMHBBJ4-3R:B компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1HT08EMHBBJ4-3R:B (PDF), цена MT29F1HT08EMHBBJ4-3R:B, Распиновка MT29F1HT08EMHBBJ4-3R:B, руководство MT29F1HT08EMHBBJ4-3R:B и решение на замену MT29F1HT08EMHBBJ4-3R:B.
MT29F1HT08EMHBBJ4-3R:B производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1HT08EMHBBJ4-3R:B компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1HT08EMHBBJ4-3R:B (PDF), цена MT29F1HT08EMHBBJ4-3R:B, Распиновка MT29F1HT08EMHBBJ4-3R:B, руководство MT29F1HT08EMHBBJ4-3R:B и решение на замену MT29F1HT08EMHBBJ4-3R:B.
MT29F1HT08EMHBBJ4-3R:B FAQ
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1. What is the maximum operating temperature for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The maximum operating temperature for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory during read operations?
The typical power consumption of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory during read operations is 50mA.
3. Can the MT29F1HT08EMHBBJ4-3R:B NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the MT29F1HT08EMHBBJ4-3R:B NAND flash memory at voltages lower than the specified minimum voltage can result in unreliable behavior and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
To extend the lifespan of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory, it is recommended to implement wear-leveling algorithms and error correction codes, as well as minimizing write operations whenever possible.
5. Is the MT29F1HT08EMHBBJ4-3R:B NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is designed to operate within industrial temperature ranges, making it suitable for a wide range of applications.
6. What is the maximum clock frequency supported by the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The maximum clock frequency supported by the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 50MHz.
7. Can the MT29F1HT08EMHBBJ4-3R:B NAND flash memory be used in automotive applications?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is qualified for automotive applications and meets the necessary industry standards.
8. What is the typical data retention period for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The typical data retention period for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 10 years.
9. Does the MT29F1HT08EMHBBJ4-3R:B NAND flash memory support hardware-based data protection features?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory supports hardware-based data protection features such as block locking and secure erase commands.
10. What are the available package options for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The MT29F1HT08EMHBBJ4-3R:B NAND flash memory is available in a 63-ball BGA package.
The maximum operating temperature for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory during read operations?
The typical power consumption of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory during read operations is 50mA.
3. Can the MT29F1HT08EMHBBJ4-3R:B NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the MT29F1HT08EMHBBJ4-3R:B NAND flash memory at voltages lower than the specified minimum voltage can result in unreliable behavior and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
To extend the lifespan of the MT29F1HT08EMHBBJ4-3R:B NAND flash memory, it is recommended to implement wear-leveling algorithms and error correction codes, as well as minimizing write operations whenever possible.
5. Is the MT29F1HT08EMHBBJ4-3R:B NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is designed to operate within industrial temperature ranges, making it suitable for a wide range of applications.
6. What is the maximum clock frequency supported by the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The maximum clock frequency supported by the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 50MHz.
7. Can the MT29F1HT08EMHBBJ4-3R:B NAND flash memory be used in automotive applications?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is qualified for automotive applications and meets the necessary industry standards.
8. What is the typical data retention period for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The typical data retention period for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory is 10 years.
9. Does the MT29F1HT08EMHBBJ4-3R:B NAND flash memory support hardware-based data protection features?
Yes, the MT29F1HT08EMHBBJ4-3R:B NAND flash memory supports hardware-based data protection features such as block locking and secure erase commands.
10. What are the available package options for the MT29F1HT08EMHBBJ4-3R:B NAND flash memory?
The MT29F1HT08EMHBBJ4-3R:B NAND flash memory is available in a 63-ball BGA package.
MT29F1HT08EMHBBJ4-3R:B Связанные ключевые слова
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MT29F1HT08EMHBBJ4-3R:B Цена
MT29F1HT08EMHBBJ4-3R:B Картина
MT29F1HT08EMHBBJ4-3R:B Напряжение на выводе
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