MT29F1G08ABAFAWP-ITE:F Micron Technology Inc. SLC 1G 128MX8 TSOP
Интегральные схемы (ИС)
Номер производителя:
MT29F1G08ABAFAWP-ITE:F
Производитель:
Категория продукции:
Описание:
SLC 1G 128MX8 TSOP
Состояние RoHs:
Таблицы данных:
Access Time :
Clock Frequency :
Memory Format :
Memory Interface :
Memory Size :
Memory Type :
Mounting Type :
Operating Temperature :
Package / Case :
Packaging :
Part Status :
Series :
Supplier Device Package :
Technology :
Voltage - Supply :
Write Cycle Time - Word, Page :
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47,425
Unit Price:
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MT29F1G08ABAFAWP-ITE:F Конкурентные цены
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MT29F1G08ABAFAWP-ITE:F Особенности
MT29F1G08ABAFAWP-ITE:F is produced by Micron Technology Inc., belongs to объем памяти.
MT29F1G08ABAFAWP-ITE:F Подробная информация о продукции
:
MT29F1G08ABAFAWP-ITE:F — это объем памяти, буферные усилители, разработанные и
произведенные
Micron Technology Inc..
MT29F1G08ABAFAWP-ITE:F производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
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MT29F1G08ABAFAWP-ITE:F компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
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Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAFAWP-ITE:F (PDF), цена MT29F1G08ABAFAWP-ITE:F, Распиновка MT29F1G08ABAFAWP-ITE:F, руководство MT29F1G08ABAFAWP-ITE:F и решение на замену MT29F1G08ABAFAWP-ITE:F.
MT29F1G08ABAFAWP-ITE:F производства Micron Technology Inc. можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
MT29F1G08ABAFAWP-ITE:F компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных MT29F1G08ABAFAWP-ITE:F (PDF), цена MT29F1G08ABAFAWP-ITE:F, Распиновка MT29F1G08ABAFAWP-ITE:F, руководство MT29F1G08ABAFAWP-ITE:F и решение на замену MT29F1G08ABAFAWP-ITE:F.
MT29F1G08ABAFAWP-ITE:F FAQ
:
1. What is the maximum operating frequency of the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The maximum operating frequency of the MT29F1G08ABAFAWP-ITE:F NAND flash memory is 50MHz.
2. What is the typical power consumption of the MT29F1G08ABAFAWP-ITE:F NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAFAWP-ITE:F NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABAFAWP-ITE:F NAND flash memory withstand high temperatures?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The data retention period of the MT29F1G08ABAFAWP-ITE:F NAND flash memory is 10 years.
5. Does the MT29F1G08ABAFAWP-ITE:F NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The MT29F1G08ABAFAWP-ITE:F NAND flash memory is available in a 48-ball TSOP (Thin Small Outline Package) and a 63-ball BGA (Ball Grid Array) package.
7. Can the MT29F1G08ABAFAWP-ITE:F NAND flash memory be operated at different supply voltages?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory can be operated at both 3.3V and 1.8V supply voltages.
8. What is the maximum program/erase cycle endurance of the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The MT29F1G08ABAFAWP-ITE:F NAND flash memory has a maximum program/erase cycle endurance of 10,000 cycles.
9. Is the MT29F1G08ABAFAWP-ITE:F NAND flash memory compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
10. Does the MT29F1G08ABAFAWP-ITE:F NAND flash memory support bad block management?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory supports built-in bad block management for improved reliability and data integrity.
The maximum operating frequency of the MT29F1G08ABAFAWP-ITE:F NAND flash memory is 50MHz.
2. What is the typical power consumption of the MT29F1G08ABAFAWP-ITE:F NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAFAWP-ITE:F NAND flash memory during read operations is 25mA.
3. Can the MT29F1G08ABAFAWP-ITE:F NAND flash memory withstand high temperatures?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory is designed to withstand high temperatures up to 85°C.
4. What is the data retention period of the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The data retention period of the MT29F1G08ABAFAWP-ITE:F NAND flash memory is 10 years.
5. Does the MT29F1G08ABAFAWP-ITE:F NAND flash memory support hardware data protection features?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The MT29F1G08ABAFAWP-ITE:F NAND flash memory is available in a 48-ball TSOP (Thin Small Outline Package) and a 63-ball BGA (Ball Grid Array) package.
7. Can the MT29F1G08ABAFAWP-ITE:F NAND flash memory be operated at different supply voltages?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory can be operated at both 3.3V and 1.8V supply voltages.
8. What is the maximum program/erase cycle endurance of the MT29F1G08ABAFAWP-ITE:F NAND flash memory?
The MT29F1G08ABAFAWP-ITE:F NAND flash memory has a maximum program/erase cycle endurance of 10,000 cycles.
9. Is the MT29F1G08ABAFAWP-ITE:F NAND flash memory compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
10. Does the MT29F1G08ABAFAWP-ITE:F NAND flash memory support bad block management?
Yes, the MT29F1G08ABAFAWP-ITE:F NAND flash memory supports built-in bad block management for improved reliability and data integrity.
MT29F1G08ABAFAWP-ITE:F Связанные ключевые слова
:
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MT29F1G08ABAFAWP-ITE:F Картина
MT29F1G08ABAFAWP-ITE:F Напряжение на выводе
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