IRF7389PBF Infineon Technologies MOSFET N/P-CH 30V 8-SOIC
Дискретные полупроводниковые приборы 8-SOIC (0.154", 3.90mm Width)
Номер производителя:
IRF7389PBF
Производитель:
Категория продукции:
Описание:
MOSFET N/P-CH 30V 8-SOIC
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
IRF7389PBF Таблицы данных(PDF)
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Packaging :
Tube
Part Status :
Not For New Designs
Power - Max :
2.5W
Rds On (Max) @ Id, Vgs :
29 mOhm @ 5.8A, 10V
Series :
HEXFET®
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
1V @ 250µA
в наличии
25,569
Unit Price:
Свяжитесь с нами
Предложение
IRF7389PBF Конкурентные цены
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IRF7389PBF Особенности
IRF7389PBF is produced by Infineon Technologies, belongs to Транзисторы - полевые транзисторы, МОП-транзисторы - массивы, and its best working temperature is -55°C ~ 150°C (TJ), the size is 8-SOIC (0.154", 3.90mm Width), and Tube is its most common packaging method, which belongs to the HEXFET® series, using 8-SO.
IRF7389PBF Подробная информация о продукции
:
IRF7389PBF — это Транзисторы - полевые транзисторы, МОП-транзисторы - массивы, буферные усилители, разработанные и
произведенные
Infineon Technologies.
IRF7389PBF производства Infineon Technologies можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IRF7389PBF компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IRF7389PBF (PDF), цена IRF7389PBF, Распиновка IRF7389PBF, руководство IRF7389PBF и решение на замену IRF7389PBF.
IRF7389PBF производства Infineon Technologies можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
IRF7389PBF компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных IRF7389PBF (PDF), цена IRF7389PBF, Распиновка IRF7389PBF, руководство IRF7389PBF и решение на замену IRF7389PBF.
IRF7389PBF FAQ
:
1. What is the maximum drain-source voltage (Vds) for the IRF7389PBF MOSFET?
The maximum drain-source voltage (Vds) for the IRF7389PBF MOSFET is 30 volts.
2. What is the continuous drain current (Id) rating of the IRF7389PBF MOSFET?
The continuous drain current (Id) rating of the IRF7389PBF MOSFET is 10 amperes.
3. What is the on-state resistance (Rds(on)) of the IRF7389PBF MOSFET at a specified gate-source voltage and drain current?
The on-state resistance (Rds(on)) of the IRF7389PBF MOSFET is typically 8.5 milliohms at a gate-source voltage of 10 volts and a drain current of 20 amperes.
4. Can the IRF7389PBF MOSFET be used in high-frequency switching applications?
Yes, the IRF7389PBF MOSFET is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
5. What is the maximum junction temperature (Tj) for the IRF7389PBF MOSFET?
The maximum junction temperature (Tj) for the IRF7389PBF MOSFET is 175 degrees Celsius.
6. Does the IRF7389PBF MOSFET have built-in protection features such as overcurrent or overtemperature protection?
No, the IRF7389PBF MOSFET does not have built-in protection features and external circuitry may be required for overcurrent or overtemperature protection.
7. What is the gate-source voltage (Vgs) range for turning on the IRF7389PBF MOSFET?
The gate-source voltage (Vgs) range for turning on the IRF7389PBF MOSFET is typically 2 to 4 volts.
8. Is the IRF7389PBF MOSFET suitable for automotive or industrial applications?
Yes, the IRF7389PBF MOSFET is suitable for automotive and industrial applications due to its rugged construction and high reliability.
9. What is the input capacitance (Ciss) of the IRF7389PBF MOSFET?
The input capacitance (Ciss) of the IRF7389PBF MOSFET is typically 1700 picofarads.
10. Can the IRF7389PBF MOSFET be used in parallel to increase current-handling capability?
Yes, the IRF7389PBF MOSFET can be used in parallel to increase current-handling capability, but proper attention should be given to current sharing and thermal management.
The maximum drain-source voltage (Vds) for the IRF7389PBF MOSFET is 30 volts.
2. What is the continuous drain current (Id) rating of the IRF7389PBF MOSFET?
The continuous drain current (Id) rating of the IRF7389PBF MOSFET is 10 amperes.
3. What is the on-state resistance (Rds(on)) of the IRF7389PBF MOSFET at a specified gate-source voltage and drain current?
The on-state resistance (Rds(on)) of the IRF7389PBF MOSFET is typically 8.5 milliohms at a gate-source voltage of 10 volts and a drain current of 20 amperes.
4. Can the IRF7389PBF MOSFET be used in high-frequency switching applications?
Yes, the IRF7389PBF MOSFET is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
5. What is the maximum junction temperature (Tj) for the IRF7389PBF MOSFET?
The maximum junction temperature (Tj) for the IRF7389PBF MOSFET is 175 degrees Celsius.
6. Does the IRF7389PBF MOSFET have built-in protection features such as overcurrent or overtemperature protection?
No, the IRF7389PBF MOSFET does not have built-in protection features and external circuitry may be required for overcurrent or overtemperature protection.
7. What is the gate-source voltage (Vgs) range for turning on the IRF7389PBF MOSFET?
The gate-source voltage (Vgs) range for turning on the IRF7389PBF MOSFET is typically 2 to 4 volts.
8. Is the IRF7389PBF MOSFET suitable for automotive or industrial applications?
Yes, the IRF7389PBF MOSFET is suitable for automotive and industrial applications due to its rugged construction and high reliability.
9. What is the input capacitance (Ciss) of the IRF7389PBF MOSFET?
The input capacitance (Ciss) of the IRF7389PBF MOSFET is typically 1700 picofarads.
10. Can the IRF7389PBF MOSFET be used in parallel to increase current-handling capability?
Yes, the IRF7389PBF MOSFET can be used in parallel to increase current-handling capability, but proper attention should be given to current sharing and thermal management.
IRF7389PBF Связанные ключевые слова
:
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IRF7389PBF Картина
IRF7389PBF Напряжение на выводе
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Минимальный заказ: 1
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